Samsung also readying 64GB NAND flash modules

Following Toshiba’s announcement last month, Samsung hasĀ provided details about their next generation of NAND flash modules. Like Toshiba, the new modules offered by Samsung will be 16-layer stacks of 32 Gbit flash chips, providing a total of 64GB of storage per chip.

In addition to the new flash modules, they also announced a new microSD card with 32GB of storage capacity. It uses the same next-generation memory chips as the 64GB flash modules:

The 32GB microSD card, developed this month, stacks eight 32Gb NAND components and a card controller. The industry’s highest capacity, production-ready microSD card is enabled by the use of Samsung’s advanced 30-nm class 32Gb NAND flash memory technology. Previously, the highest density microSD card in production had a 16GB capacity and was based on 40nm-class 16Gb NAND. The new 32GB card is 1mm-thick. The portion of the card that is inserted into a handset measures just 0.7 mm in height.

The 64GB moviNAND modules have been in production since last month; samples of the SD card are being tested by OEMs.

Related posts:

  1. Intel/Micron joint venture readying 25nm flash memory
  2. Samsung touts low-power 512GB SSD
  3. F5100: 1U, 4TB flash storage from Sun
  4. More PCI-express flash storage: Super Talent
  5. Toshiba adds smaller SSDs to their product lineup

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