Samsung has announced a new member for their Solid State Drive family. The drive uses 32 gigabit Samsung chips that entered production last year; new about the drive is a “toggle-mode DDR structure”. According to Samsung, this leads to a significant performance increase:
The new 512GB SSD makes use of a 30 nanometer-class 32 gigabit chip that the company began producing last November. The toggle-mode DDR structure together with the SATA 3.0Gbps interface generates a maximum sequential read speed of 250 Megabyte per second (MBps) and a 220MBps sequential write speed, both of which provide three-fold the performance of a typical hard disk drive. At these speeds, two standard length DVD movies (approximately 4GB each) can be stored in just a minute.
The speeds sound remarkably similar to what other manufacturers are currently offering: speeds close to the theoretical limit of a 3.0Gbps SATA interface. The drive has a low-power controller specifically designed for toggle-mode DDR NAND. According to Samsung, this should result in better performance than last generation’s drives without increasing power usage. A nice statement, but without any actual figures on power usage listed in the press release or anywhere else on their website to back it up.
Other features listed are built-in encryption using 256bit AES, and TRIM support for Windows 7.
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