Samsung touts low-power 512GB SSD

Samsung has announced a new member for their Solid State Drive family. The drive uses 32 gigabit Samsung chips that entered production last year; new about the drive is a “toggle-mode DDR structure”. According to Samsung, this leads to a significant performance increase:

The new 512GB SSD makes use of a 30 nanometer-class 32 gigabit chip that the company began producing last November. The toggle-mode DDR structure together with the SATA 3.0Gbps interface generates a maximum sequential read speed of 250 Megabyte per second (MBps) and a 220MBps sequential write speed, both of which provide three-fold the performance of a typical hard disk drive. At these speeds, two standard length DVD movies (approximately 4GB each) can be stored in just a minute.

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Samsung also readying 64GB NAND flash modules

Following Toshiba’s announcement last month, Samsung hasĀ provided details about their next generation of NAND flash modules. Like Toshiba, the new modules offered by Samsung will be 16-layer stacks of 32 Gbit flash chips, providing a total of 64GB of storage per chip.

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